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Epitaxy | TRUMPF


Clean growth layer by layer


Epitaxy is a process in which single crystalline layers, e.g. of silicon, are created on single crystal substrates of the same material. The substrates are located on an inductively heated graphite susceptor. This requires a very high degree of temperature homogeneity. Epitaxy is used, for example, in manufacturing LEDs. TRUMPF Hüttinger medium-frequency generators provide the necessary process energy reliably and stably.