Two characteristics of bipolar power supplies are presented in this article: (i) a wide pulse frequency range of up to 100 kHz and (ii) an additional brake time between the positive and negative half-wave of the square wave shape of electricity and voltage.

Since the introduction of dual magnetron sputtering (DMS) for highly insulating layers, it is possible to choose between a square wave pulse and sine wave power supply.

A countermeasure against rapid fluctuations in the plasma’s impedance range is automatic frequency tuning, during which the RF generator sets its fundamental oscillation to a frequency value with better adaptation within a time frame of less than one millisecond.

Direct current and pulsed direct current sputtering are some of the most frequently used sputtering technologies in the industrial sector. The introduction of pulsed direct current technology facilitated the mass production of coatings made of non-conductive compounds created by reactive magnetron sputtering.

Reactive sputtering is a largely successful method used in modern industry to create insulating coatings and hard coatings. In comparison with evaporation, sputtering offers the benefits of ion-assisted coating which makes it attractive for the industry despite considerable system and electricity costs.

The creation of arcs during MF magnetron sputtering: A well-known problem during reactive sputtering is arc formation at the cathodes.

This paper explores the effects of performance-combining structures on the RF and thermal performance of RF high power amplifiers under incongruent conditions. 

High Power Impulse Magnetron Sputtering (HIPIMS) is the latest PVD process (Physical Vapor Deposition) available for the industry.

Atomic Layer Deposition (ALD) is a procedure during which a number of thin layer materials are deposited from a vapour phase. A very thin film is built up out of atomic layers in several coating cycles.

One of the most interesting resorption materials for solar cells are copper-indium-selenide (CIS) based materials whose properties can be changed by replacing part of the indium with gallium to make Cu(In,Ga)Se2, known as CIGS.

Continuous improvements of semiconductor processes are required to ensure a continuous reduction in size. This in turn requires RF generators that have an even higher signal quality in relation to output power and time resolution.