Metal Organic Chemical Vapor Phase Deposition (MOCVD) is a highly complex procedure for the growth of crystalline layers. MOCVD is implemented for the manufacture of light emitting diodes (LEDs), lasers, transistors, solar cells and other electronic and opto-electronic components, for example, and is the key technology for future markets with high growth potential. TruHeat DC 3000 is the perfect candidate for these applications.

TRUMPF Hüttinger offers a wide range of process power supply systems, outer circles, inductors and accessories which are already being used successfully for crystal growing and epitaxy processes by a variety of key players in the SiC and GaN industry.

This paper focuses on strategies to reduce operational and capital expenditures while improving quality in SiC/GaN production processes, and provides an in-depth look at various heating methods used in SiC/GaN manufacturing, including microwave, RF dielectric, DC resistive, and induction heating.